Centre for Micro- & Nano-Electronics (CMNE)

Publications

Journal Publications

  1. Kejun Wu, Jun Zhang, Yuanbo Li, Xiangzhan Wang, Yang Liu, Qi Yu, Tupei Chen, “Design of AM Self-Capacitive Transparent Touch Panel Based on a-IGZO Thin-Film Transistors”, IEEE Access, Vol.8, pp.76929-76934

  2. J.-H. Seo, E. Swinnich, Y.-Y. Zhang, and M. Kim, “Low dimensional freestanding semiconductors for flexible optoelectronics: materials, synthesis, process, and applications”, Materials Research Letters, 8(4), 123

  3. A. Dubrovkin, B. Qiang, T. Salim, D. Nam, N. Zheludev, and Q. Wang, “Resonant Nanostructures for Highly Confined and Ultra-Sensitive Surface Phonon-Polaritons,” Nature Communications# Accepted (2020) IF: 12.124

  4. Hanlin Xie, Zhihong Liu, Yu Gao, Kumud Ranjan, Kenneth E. Lee and Geok Ing Ng, "CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and record Johnson’s figure-of-merit of 8.8 THz·V," Applied Physics Express, Vol. 13, No. 2, pp. 026503-1-026503-4, Jan. 2020.

  5. Wan Khai Loke, Yue Wang, Kwang Hong Lee, Zhihong Liu, Hanlin Xie, Siau Ben Chiah, Kenneth E. Lee, Xing Zhou, Chuan Seng Tan, Geok Ing Ng, Eugene A. Fitzgerald and Soon Fatt Yoon, "High-frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers", Journal of the Electron Devices Society, Vol. 8, pp. 122-125, Jan. 2020.

  6. Ranjan K., Sandupatla A., Arulkumaran S., and Ng G.I. ‘Low Static and Dynamic On-Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond’, Phys. Stat. Soli (a), 2020 (2020) 1900815, pp.1-4. https://doi.org/10.1002/pssa.201900815

  7. Sandupatla A., Arulkumaran S, Ranjan K., Ng G.I., Deki M., Nitta S., Honda Y., and Amano H. ‘Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer”, Japanese Journal of Applied Physics 59 (1), 010906 (2020) https://doi.org/10.7567/1347-4065/ab65cd

  8. D.P. Poenar, G. Yang, W.K. Wan and S. Feng, “Low-Cost Method and Biochip for Measuring the Trans-Epithelial Electrical Resistance (TEER) of Esophageal Epithelium”, Materials, vol.13 (2020), p.2354 (18 pp).

  9. 1. R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan, M. Agrawal (2020). In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications. Thin Solid Films, 708, 138128.

  10. Sun CQ. Electron and Phonon Spectrometrics: Springer Nature; 2020 April 01, 2020. 541 p.

  11. Sun CQ. Water Electrification: Principles and Applications (10.1016/j.cis.2020.10218). Adv Colloid and Interf Sci. 2020.

  12. Sun CQ. Rules essential to water molecular undercoordination (Themetic Review). Chinese Physics B. 2020; https://doi.org/10.1088/1674-1056/ab8dad.

  13. Sun CQ. The BOLS-NEP theory reconciling the attributes of undercoordinated adatoms, defects, surfaces, and nanostructures (Perspective). Nanomaterials Science. 2020;https://doi.org/10.1016/j.nanoms.2019.12.001.

  14. Li L, Bo M, Li J, Huang Y, Zhang X, Sun CQ. Water ice compression: O:H-O bond symmetrization and polarization mediate its dielectric, mechanical, optical, and thermal properties. Journal of Moleculr Liquids. 2020;in press.

  15. Zhang L, Li H, Sun CQ, Ouyang G. Strain engineering of the lattice vibration modes in monolayer black phosphorus. J Raman Spect. 2020;51(2):213-20.

  16. Wu YJ, Gong YY, Liu JH, Chen TY, Liu Q, Zhu YT, et al. Constructing NiFe-LDH wrapped Cu2O nanocube heterostructure photocatalysts for enhanced photocatalytic dye degradation and CO2 reduction via Z-scheme mechanism. J Alloys Compd. 2020;831.

  17. Sun CQ, Yao C, Zhang L, Huang YL. What makes an explosion happen? J Mol Liq. 2020;306.

  18. Ren ZX, Liu XJ, Zhuge ZH, Gong YY, Sun CQ. MoSe2/ZnO/ZnSe hybrids for efficient Cr(VI) reduction under visible light irradiation. Chinese Journal of Catalysis. 2020;41(1):180-7.

  19. Li CY, Li H, Zong HH, Huang YL, Gozin M, Sun CQ, et al. Strategies for Achieving Balance between Detonation Performance and Crystal Stability of High-Energy-Density Materials. Iscience. 2020;23(3).

  20. Huang, K., Wu, L., Wang, M.Y., Swain, N., Mallikarjuna, M., Luo, Y.Z., Han, K., Chen, M.F., Ye, C., Yang, A.J., Xu, H., Qi, D.C., N’Diaye, A.T., Panagopoulos, C., Primetzhofer, D., Shen, L., Sengupta, P., Ma, J*, Feng, Z.X., Nan, C.W.*, and Renshaw Wang, X*. Tailoring magnetic order via atomically stacking 3d/5d electrons to achieve high-performance spintronic device. Applied Physics Review. 7, 011401 (2020).

  21. Lixing Kang, Chen Ye, Xiaoxu Zhao, Xieyu Zhou, Junxiong Hu, Qiao Li, Qingling Ouyang, Jiefu Yang, Dianyi Hu, Jieqiong Chen, Xun Cao, Yong Zhang, Manzhang Xu, Jun Di, Dan Tian, Pin Song, Govindan Kutty, Qingsheng Zeng, Qundong Fu, Ya Deng, Jiadong Zhou, Stephen J. Pennycook, Ariando Ariando, Feng Miao, Guo Hong, Yizhong Huang, Ken-Tye Yong*, Wei Ji*, Xiao Renshaw Wang*, Zheng Liu*, Phase-controllable growth of ultrathin 2D magnetic FeTe crystals, Nature Communications accepted (2020).
  1. Jianxun Sun, Yuan Bo Li, Yiyang Ye, Jun Zhang, Gang Yih Chong, Juan Boon Tan, Zhen Liu, Tupei Chen, “3D Geometric Engineering of the Double Wedge-like Electrodes for Filament-type RRAM Device Performance Improvement”, IEEE Access, Vol.8, pp.4924 – 4934

  2. J. D. Kim*, M. Kim*, C. Chan, N. Draeger, J. Coleman, and X. Li, “CMOS Compatible Catalyst for MacEtch: Titanium Nitride Assisted Chemical Etching in Vapor Phase for High Aspect Ratio Silicon Nanostructures”, ACS Applied Materials & Interfaces, 11(30), pp. 27371-27377 (2019).

  3. H.-C. Huang*, M. Kim*, X. Zhan, K. Chabak, J. D. Kim, A. Kvit, D. Liu, Z. Ma, J.-M. Zuo and X. Li, "High Aspect Ratio β-Ga2O3 Fin Arrays with Low Interface Charge Density by Inverse Metal-Assisted Chemical Etching", ACS Nano, 13(8), 8784 (2019).

  4. S. J. Cho, D. Liu, J.-H. Seo, R. Dalmau, K. Kim, J. Park, J. Gong, D. Zhao, X. Yin, Y. H. Jung, I.-K. Lee, M. Kim, X. Wang, J. D. Albrecht, W. Zhou, B. Moody, and Z. Ma, “P-type silicon as hole supplier for nitride-based UVC LEDs”, New Journal of Physics, 21(2), 023011 (2019).

  5. Z. Song, W. Fan, C. Tan, Q. Wang, D. Nam, Z. Hua, and G. Sun, “Band Structure of Strained Ge1-xSnx Alloy: a Full-Zone 30-Band k•p Model,” IEEE Journal of Quantum Electronics 56(1), 1-8 (2019) IF: 1.887

  6. Z. Song, W. Fan, C. Tan, Q. Wang, D. Nam, Z. Hua, and G. Sun, “Band Structure of Ge1-xSnx Alloy: a Full-Zone 30-Band k•p Model,” New J. Phys.# 21, 073037 (2019) IF: 3.783

  7. H. Joo, M. Shin, H. Jung, H. Cha, D. Nam, and H. Kwon, “Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations,” Materials 12(23), 3815 (2019) IF: 2.728

  8. Hanlin Xie, Zhihong Liu, Yu Gao, Kumud Ranjan, Kenneth E. Lee and Geok Ing Ng, "Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f T of 310 GHz", Applied Physics Express, Vol. 12, No. 12, pp. 126506-1-126506-5, Nov. 2019.

  9. Sandupatla A., Arulkumaran S, Ranjan K., Ng G.I., Deki M., Nitta S., Honda Y., and Amano H. ‘Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky Diodes with record-high charge collection efficiency’, Sensors, 19, Nov 2019, 5107, pp1-12. https://doi.org/10.3390/s19235107

  10. Ranjan K., Arulkumaran S., Ng G.I. and Sandupatla A. ‘Investigation of self-heating effect on DC and RF performances in AlGaN/GaN high electron mobility transistors on CVD-Diamond’, IEEE Journal of the Electron. Dev. Soc., 7, 15 Oct 2019, pp.1264-1269. https://doi.org/10.1109/JEDS.2019.2947564.

  11. Ranjan K., Arulkumaran S. and Ng G.I.’ Investigations of temperature-dependent interface traps in AlGaN/GaN HEMT on CVD-diamond’, Appl. Phys. Exp., Vol 12, No. 10, Oct 2019, pp.106506-1-4. https://doi.org/10.7567/1882-0786/ab45d2

  12. Sandupatla A., Arulkumaran S, Ng G.I., Ranjan K., Deki M., Nitta S., Honda Y., and Amano H. ’GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates’, AIP Advances. Vol 9, No.4, Apr 2019, p.045007-1. https://doi.org/10.1063/1.5087491

  13. C. Yang, G. Yang, Q. Ouyang, S. Kuang, P. Song, G. Xu, D.P. Poenar, G. Zhu, K.-T. Yong and Z.L. Wang, “Nanowire-array-based gene electro-transfection system driven by human-motion operated triboelectric nanogenerator”, Nano Energy, vol.64 (Oct.2019), article 103901 (10 pp).

  14. D.P. Poenar, “Microfluidic and Micromachined/MEMS Devices for Separation, Discrimination and Detection of Airborne Particles for Pollution Monitoring”, Micromachines, vol.10, no.7 (2019), p.483 (34 pp).

  15. F.S. Iliescu, W.J. Sim, H. Heidari, D.P. Poenar, J. Miao, H.K. Taylor and C. Iliescu, "Highlighting the uniqueness in dielectrophoretic enrichment of circulating tumor cells", Electrophoresis, vol.40, no. 10 (2019), p.1457–1477 – Featured article.

  16. F.S. Iliescu, D.P. Poenar, F. Yu, M. Ni, K.H. Chan, I. Cima, H.K. Taylor, I. Cima and C. Iliescu, “Recent advances in microfluidic methods in cancer liquid biopsy”, Biomicrofluidics, vol.13, no.4 (2019 Jul 23), p.041503.

  17. Z. Ali, K. Ghosh, S. Aditya, D.P. Poenar, "Fabrication of CNT-Based Planar Micro-Coils on Silicon Substrate", IEEE Trans. Nanotech., vol.18, no.1 (Jan.2019), p.167-175.

  18. S Patwal, M Agrawal, K Radhakrishnan, TLA Seah, N Dharmarasu. (2019). Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double-Heterojunction High-Electron-Mobility Transistor by Epilayer Stress Engineering. Physica Status Solidi A-Applications and Materials Science, 1900818, 1-7.

  19. Yi Zheng; Manvi Agrawal; Nethaji Dharmarasu; Radhakrishnan K; SHASHANK PATWAL. (2019). A study on Ga-Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy. Applied Surface Science, 481, 319-326.

  20. A.Ranjan, M. Agrawal K. Radhakrishnan and N. Dharmarasu. (2019). AlGaN/GaN HEMT based high-sensitive NO2 gas sensors. Japanese Journal of Applied Physics, 58, SCCD23 (2019).

  21. B Dror, Y Zheng, M Agrawal, K Radhakrishnan, M Orenstein, G Bahir. (2019). Mid-Infrared GaN/AlGaN Quantum Cascade Detector Grown on Silicon. IEEE Electron Device Letters, 40(2), 263-266

  22. Sun CQ. Solvation Dynamics: A Notion of Charge Injection: Springer Nature; 2019 July 03, 2019. 326 p.

  23. Yang X, Peng C, Li L, Bo M, Sun Y, Huang Y, et al. Multifield-resolved phonon spectrometrics: structured crystals and liquids. Prog Solid State Chem. 2019;55:20-66.

  24. Sun CQ, Huang Y, Zhang X. Hydration of Hofmeister ions (Historical Perspective). Adv Colloid Interf Sci. 2019;268:1-24.

  25. Sun CQ. Unprecedented O:⇔:O compression and H↔H fragilization in Lewis solutions (Perspective). PCCP. 2019;21: 2234-50.

  26. Zhang L, Yao C, Yu Y, Wang X, Sun CQ, Chen J. Mechanism and Functionality of Pnictogen Dual Aromaticity in Pentazolate Crystals. Chemphyschem. 2019;20(19): 2525-30.

  27. Zhang L, Yao C, Yu Y, Jiang SL, Sun CQ, Chen J. Stabilization of the Dual-Aromatic cyclo-N-5(-) Anion by Acidic Entrapment. J Phys Chem Lett. 2019;10(10):2378-85.

  28. Yang XX, Peng C, Li L, Bo ML, Sun Y, Huang YL, et al. Multifield-resolved phonon spectrometrics: structured crystals and liquids. Prog Solid State Chem. 2019;55:20-66.

  29. Xie ZX, Cai XC, Sun CQ, Liang S, Shao S, Huang SS, et al. O-2-Loaded pH-Responsive Multifunctional Nanodrug Carrier for Overcoming Hypoxia and Highly Efficient Chemo-Photodynamic Cancer Therapy. Chem Mater. 2019;31(2):483-90.

  30. Wu Y, Li C, Liu W, Li HH, Gong YY, Niu LY, et al. Unexpected monoatomic catalytic-host synergetic OER/ORR by graphitic carbon nitride: density functional theory. Nanoscale. 2019;11(11):5064-71.

  31. Sun CQ, Yao C, Sun Y, Liu XJ, Fang HX, Huang YL. (H, Li)Cl and LiOH hydration: Surface tension, solution conductivity and viscosity, and exothermic dynamics. J Mol Liq. 2019;283:116-22.

  32. Sun CQ, Huang YL, Zhang X. Hydration of Hofmeister ions. Adv Colloid Interf Sci. 2019;268:1-24.

  33. Sun CQ. Spectrometric engineering for the secrecy of life and matter. Chinese Science Bulletin-Chinese. 2019;64(26):2667-71.

  34. Sun CQ. Unprecedented O:double left right arrow:O compression and HH fragilization in Lewis solutions. PCCP. 2019;21(5):2234-50.

  35. Peng Y, Yang YZ, Sun Y, Huang YL, Sun CQ. Phonon abundance-stiffness-lifetime transition from the mode of heavy water to its confinement and hydration. J Mol Liq. 2019;276:688-93.

  36. Niu LY, Shen C, Yan LJ, Zhang JH, Lin Y, Gong YY, et al. Waste bones derived nitrogen-doped carbon with high micropore ratio towards supercapacitor applications. J Colloid Interface Sci. 2019;547:92-101.

  37. Liu XJ, Liu BB, Li L, Zhuge ZH, Chen PB, Li C, et al. Cu2In2ZnS5/Gd2O2S:Tb for full solar spectrum photoreduction of Cr(VI) and CO2 from UV/vis to near-infrared light. Applied Catalysis B-Environmental. 2019;249:82-90.

  38. Li HH, Wu Y, Li C, Gong YY, Niu LY, Liu XJ, et al. Design of Pt/t-ZrO2/g-C3N4 efficient photocatalyst for the hydrogen evolution reaction. Applied Catalysis B-Environmental. 2019;251:305-12.

  39. Gao SY, Huang YL, Zhang X, Sun CQ. Unexpected Solute Occupancy and Anisotropic Polarizability in Lewis Basic Solutions. J Phys Chem B. 2019;123(40):8512-8.

  40. Fang HX, Tang ZX, Liu XJ, Huang YL, Sun CQ. Discriminative ionic capabilities on hydrogen-bond transition from the mode of ordinary water to (Mg, Ca, Sr)(Cl, Br)(2) hydration. J Mol Liq. 2019;279:485-91.

  41. Bo ML, Li JB, Yao C, Huang ZK, Li L, Sun CQ, et al. Electronic structure of two-dimensional In and Bi metal on BN nanosheets. Rsc Advances. 2019;9(17):9342-7.

  42. Bo ML, Lei L, Yao C, Huang ZK, Peng C, Sun CQ. Electronic and magnetic behaviour of 2D metal structures of Y on Li(110) surface. Appl Surf Sci. 2019;471:1005-10.

  43. Han, K., Hu. K., Li, X., Huang, K., Huang, Z., Zeng, S., Qi, D., Ye, C., Yang, J., Xu, H., Ariando, A., Yi, J., Lü, W.M., Yan, S.S., and Renshaw Wang, X.*, Erasable and recreatable two-dimensional electron gas at the heterointerface of SrTiO3 and a water-dissolvable overlayer. Science Advances. 5, eaaw7286 (2019).

  44. Li, M.S., Tang, C.H., Paudel, T., Song, D.S., Lü, W.M., Han, K., Huang, Z., Zeng, S.W., Renshaw Wang, X.*, Yang, P., Ariando, Chen, J.S., Venkatesan, T., Tsymbal, E., Li, C.J.*, and Pennycook, S.J.* Controlling magnetic properties of LaMnO3/SrTiO3 heterostructures by stoichiometry and electronic reconstruction: Atomic-scale evidence. Advanced Materials. 31, 1901386 (2019).

  45. Wan, D., Yan, B., Chen, J., Wu, S., Hong, J., Song, D., Zhao, Z., Chi, X., Zeng, S., Huang, Z., Li, C., Han, K., Zhou, W., Cao, Y., Rusydi, A., Pennycook, S.J., Yang, P. Ariando, Xu, R., Xu, Q.-H., Renshaw Wang, X.*, and Venkatesan, T.V.*. New family of plasmonic photocatalysts without noble metals. Chemistry of Materials. 31, 7, 2320 (2019).

  46. Lai, Y.M., Su, H.*, Wang, G., Tang, X.L., Huang, X., Liang, X., Zhang, H., Li, Y., Huang, K., and Renshaw Wang, X*. Low-temperature sintering of microwave ceramics with high Qf values through LiF addition. Journal of the American Ceramic Society. 102, 1893-1903 (2019).

  47. Lai, Y.M., Su, H.*, Wang, G., Tang, X.L., Liang, X.F., Huang, X., Li, Y.X., Zhang, H.W., Ye, C., and Renshaw Wang, X.* Improved microwave dielectric properties of CaMgSi2O6 ceramics through CuO doping. Journal of Alloys and Compounds. 772, 40-48 (2019).
  1. J. J. Wang, S. G. Hu, X. T. Zhan, Q. Yu, Z. Liu, T. P. Chen, Y. Yin, Sumio Hosaka & Y. Liu, “Handwritten-Digit Recognition by Hybrid Convolutional Neural Network based on HfO2 Memristive Spiking-Neuron”, Scientific Reports, Vol.8, 12546

  2. Y. Ye, T. Chen, J. Zhen, C. Xu, J. Zhang, H. Li. “Resonant scattering of green light enabled by Ag@TiO2 and its application in a green light projection screen”, Nanoscale, Vol.10, No.5, pp.2438-2446

  3. M. Kim, H.-C. Huang, J. D. Kim, K. Chabak, A. R. K. Kalapala, W. Zhou, and X. Li, “Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity”, Applied Physics Letters, 113, 222104 (2018).

  4. D. Liu, S. J. Cho, J. Park, J. Gong, J.-H. Seo, R. Dalmau, D. Zhao, K. Kim, M. Kim, A. R. K. Kalapala, J. D. Albrecht, W. Zhou, B. Moody, and Z. Ma, “226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection”, Applied Physics Letters, 113, 011111 (2018).

  5. M. Kim, S. Yi, J. D. Kim, X. Yin, J. Li, J. Bong, D. Liu, S.-C. Liu, A. Kvit, W. Zhou, X. Wang, Z. Yu, Z. Ma, and X. Li, “Enhanced Performance of Ge Photodiodes via Monolithic Antireflection Texturing and α-Ge Self-Passivation by Inverse Metal-Assisted Chemical Etching”, ACS Nano, 12(7), pp. 6748-6755 (2018).

  6. J. D. Kim*, M. Kim*, L. Kong, P. Mohseni, S. Ranganathan, J. Pachamuthu, W. K. Chim, S. Y. Chiam, J. Coleman, and X. Li, “Self-Anchored Catalyst Interface Enables Ordered Via Array Formation from Submicrometer to Millimeter Scale For Polycrystalline and Single-Crystalline Silicon”, ACS Applied Materials & Interfaces, 10(10), pp. 9116-9122 (2018).
  7. D. Liu, S. J. Cho, J. Park, J.-H. Seo, R. Dalmau, D. Zhao, K. Kim, J. Gong, M. Kim, I.-K. Lee, J. D. Albrecht, W. Zhou, B. Moody, and Z. Ma, “229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection”, Applied Physics Letter, 112, 081101 (2018).

  8. M. Kim, S. J. Cho, Y. J. Dave, H. Mi, S. Mikael, J.-H. Seo, J. U. Yoon, Z. Ma, “Fabrication of Ge on insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers”, Semiconductor Science Technology, 33, 015017 (2018).

  9. Z. Qi^, H. Sun^, M. Luo*, Y. Jung* and D. Nam, “Strained Germanium Nanowire Optoelectronic Devices for Photonic-Integrated Circuits,” J. Phys. Condens. Matter.# 30(33), 334004 (2018) IF: 2.617

  10. S. Gupta, D. Nam, J. Vuckovic and K. Saraswat, “Room Temperature Lasing Unraveled by a Strong Resonance between Gain and Parasitic Absorption in Uniaxially Strained Germanium,” Phys. Rev. B# 97(15), 155127 (2018) IF: 3.836

  11. W. Xing, Z. Liu, K. Ranjan, G. I. Ng and T. Palacios, “Planar nanostrip-channel Al2O3/InAlN/GaN MISHEMTs on Si with improved linearity”, IEEE Electron Device Letters, Vol. 39, Issue 7, pp. 947-950, July 2018.

  12. Zhang, Z., Ng, G.I., Hu, T., Qiu, H., Guo, X., Wang, W., Rouifed, M.S., Liu, C., Sia, J., Zhou, J., Littlejohns, C.G., Nedeljkovic, M., Reed, G.T., Wang, H. “Experimental Demonstration of Thermally Tunable Fano and EIT Resonances in Coupled Resonant System on SOI Platform”, IEEE Photonics Journal, 10 (3), art. no. 6601108.

  13. Li, X., Wang, H., Qiao, Z., Guo, X., Wang, W., Ng, G.I., Zhang, Y., Xu, Y., Niu, Z., Tong, C., Liu, C., “Investigation of regime switching from mode locking to Q-switching in a 2 μm InGaSb/AlGaAsSb quantum well laser”, (2018) Optics Express, 26 (7), pp. 8289-8295.

  14. Zhang, Z., Ng, G.I., Hu, T., Qiu, H., Guo, X., Wang, W., Rouifed, M.S., Liu, C., Sia, J., Zhou, J., Littlejohns, C.G., Reed, G.T., Wang, H.’ “Mid-infrared sensor based on a suspended microracetrack resonator with lateral subwavelength-grating metamaterial cladding”, (2018) IEEE Photonics Journal, 10 (2), art. no. 6801608.

  15. Weichuan Xing, Zhihong Liu, Haodong Qiu, Kumud Ranjan, Yu Gao, Geok Ing Ng and Tomas Palacios, “InAlN/GaN HEMTs on Si with high fT of 250 GHz”, IEEE Electron Device Letters, Vol. 39, Issue 1, pp. 75-78, Jan 2018.

  16. Z.A.S. Mohammed, D.P. Poenar and S. Aditya, "Fabrication of Silicon Embedded Low Resistance High Aspect Ratio Planar Copper Microcoils", J. of Micro/Nanolithography, MEMS & MOEMS, vol.17, no.1 (Jan. 2018), p.014501.

  17. Yao C, Zhang X, Huang Y, Li L, Ma Z, Sun C. Structures and Properties of Liquid Water (水的结构和反常物性). Prog Chem (Chinese). 2018;30(8):1242-56.

  18. Sun CQ. Supersolidity of undercoordinated and hydrating water (perspective). PCCP. 2018;20:30104-19.

  19. Sun CQ. Aqueous charge injection: solvation bonding dynamics, molecular nonbond interactions, and extraordinary solute capabilities. Int Rev Phys Chem. 2018;37(3-4):363-558.

  20. Zhou Y, Huang YL, Li L, Gong YY, Liu XJ, Zhang X, et al. Hydrogen-bond transition from the vibration mode of ordinary water to the (H, Na)I hydration states: Molecular interactions and solution viscosity. Vib Spectrosc. 2018;94:31-6.

  21. Yao C, Zhang X, Huang YL, Li L, Ma ZS, Sun CQ. Perspective: Structures and Properties of Liquid Water. Prog Chem. 2018;30(8):1242-56.

  22. Yang XX, Liu YH, Liu XJ, Peng JZ, Zhao HP, Sun CQ. Composition- and Temperature-Resolved Raman Shift of Silicon. Appl Spectrosc. 2018;72(4):598-603.

  23. Wu J, Liu BB, Ren ZX, Ni MY, Li C, Gong YY, et al. CuS/RGO hybrid photocatalyst for full solar spectrum photoreduction from UV/Vis to near-infrared light. J Colloid Interface Sci. 2018;517:80-5.

  24. Wang SM, Zhang X, Liu YH, Huang YL, Sun CQ. Antimonene nanoribbon band-gap expansion: Bond contraction and edge quantum entrapment. Mater Chem Phys. 2018;211:414-9.

  25. Wang SM, Zhang X, Huang YL, Sun CQ. Arsenene nanoribbon edge-resolved strong magnetism. PCCP. 2018;20(40):25716-21.

  26. Sun CQ, Chen JS, Yao C, Liu XJ, Zhang X, Huang YL. (Li, Na, K)OH hydration bonding thermodynamics: Solution self-heating. Chem Phys Lett. 2018;696:139-43.

  27. Sun CQ, Chen JS, Gong YY, Zhang X, Huang YL. (H, Li)Br and LiOH Solvation Bonding Dynamics: Molecular Nonbond Interactions and Solute Extraordinary Capabilities. J Phys Chem B. 2018;122(3):1228-38.

  28. Sun CQ. Supersolidity of undercoordinated and hydrating water. PCCP. 2018;20(48):30104-19.

  29. Peng Y, Yang YZ, Sun CQ. Technique for phonon abandance-lifetime-fluctuation-stiffness cooperativity detection （Application No.：2018014380686) 2018.

  30. Ni CH, Sun CQ, Zhou ZF, Huang YL, Liu XJ. Surface tension mediation by Na-based ionic polarization and acidic fragmentation: Inference of hypertension. J Mol Liq. 2018;259:1-6.

  31. Liu YH, Bo ML, Sun CQ, Huang YL. The Band-Gap Modulation of Graphyne Nanoribbons by Edge Quantum Entrapment. Nanomaterials. 2018;8(2).

  32. Liu J, Sun CQ, Zhu WG. Origin of efficient oxygen reduction reaction on Pd monolayer supported on Pd-M (M=Ni, Fe) intermetallic alloy. Electrochim Acta. 2018;282:680-6.

  33. Liu J, Fan XF, Sun CQ, Zhu WG. DFT Study on Intermetallic Pd-Cu Alloy with Cover Layer Pd as Efficient Catalyst for Oxygen Reduction Reaction. Materials. 2018;11(1).

  34. Liu J, Fan XF, Sun CQ, Zhu WG. DFT study on bimetallic Pt/Cu(111) as efficient catalyst for H-2 dissociation. Appl Surf Sci. 2018;441:23-8.

  35. Liu BB, Liu XJ, Liu JY, Feng CJ, Li Z, Li C, et al. Efficient charge separation between UiO-66 and ZnIn2S4 flowerlike 3D microspheres for photoelectronchemical properties. Applied Catalysis B-Environmental. 2018;226:234-41.

  36. Liu BB, Liu XJ, Li L, Li JW, Li C, Gong YY, et al. ZnIn2S4 flowerlike microspheres embedded with carbon quantum dots for efficient photocatalytic reduction of Cr(VI). Chinese Journal of Catalysis. 2018;39(12):1901-9.

  37. Li YJ, Liu Y, Wang M, Xu XT, Lu T, Sun CQ, et al. Phosphorus-doped 3D carbon nanofiber aerogels derived from bacterial-cellulose for highly-efficient capacitive deionization. Carbon. 2018;130:377-83.

  38. Li HH, Wu Y, Li L, Gong YY, Niu LY, Liu XJ, et al. Adjustable photocatalytic ability of monolayer g-C3N4 utilizing single-metal atom: Density functional theory. Appl Surf Sci. 2018;457:735-44.

  39. Huang YL, Yang XX, Sun CQ, inventorsSpectrometric evaluation of the force constant, elastic modulues, and Debye temp[erature of sized matter (CN 01811311721.9). China2018.

  40. Hou SJ, Xu XT, Wang M, Lu T, Sun CQ, Pan LK. Synergistic conversion and removal of total Cr from aqueous solution by photocatalysis and capacitive deionization. Chem Eng J. 2018;337:398-404.

  41. Gong Y, Zhou Y, Huang Y, Sun CQ, inventorsSpectrometrics of the O:H-O bond segmental length and energy relaxation (CN 105403515A). China patent CN 105403515A. 2018 Jan 08, 2018.

  42. Fang HX, Liu XJ, Sun CQ, Huang YL. Phonon Spectrometric Evaluation of the Solute-Solvent Interface in Solutions of Glycine and Its N-Methylated Derivatives. J Phys Chem B. 2018;122(29):7403-8.

  43. Chen JS, Yao C, Zhang X, Sun CQ, Huang YL. Hydrogen bond and surface stress relaxation by aldehydic and formic acidic molecular solvation. J Mol Liq. 2018;249:494-500.

  44. Bo ML, Li L, Guo YL, Yao C, Peng C, Sun CQ. Atomic configuration of hydrogenated and clean tantalum(111) surfaces: Bond relaxation, energy entrapment and electron polarization. Appl Surf Sci. 2018;427:1182-8.

  45. Zheng. L.M., Renshaw Wang, X.*, Lü, W.M.*, Li, C.J., Paudel, T.R., Liu, Z.Q., Huang, Z., Zeng, S.W., Han, K., Chen, Z.H., Qiu, X.P., Li, M.S., Yang, S., Yang, B., Chisholm, M.F., Martin, L.W., Pennycook, S.J., Tsymbal, E.Y., Coey, J.M.D., and Cao W.W. Ambipolar ferromagnetism by electrostatic doping of a manganite. Nature Communications. 9, 1897 (2018).

  46. Wu, L., Li, C.J., Ma, J., Nan, Cewen, and Renshaw Wang, X*. The role of strain and polar discontinuity in magnetism in LaMnO3/SrTiO3/LaAlO3(001) heterostructures. Science Bulletin. 63, 15, 945 (2018).

Conference Publications

  1. D. Nam, “[INVITED] Strain-Engineered Low-Threshold Group IV Lasers for Photonic-Integrated Circuits”, SPIE Photonics West, USA, Feb. 2020

  2. Ranjan K., Arulkumaran S., Ng G. I., and Sandupatla A., “Low interface trap density in AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors (MIS-HEMTs) on CVD-Diamond,” Electron Devices Technology and Manufacturing (EDTM), Mar 2020, Malaysia

  3. Sandupatla A., Arulkumaran S., Ng G.I., Ranjan K., Murmu P., Kennedy J., Deki M., Nitta S., Honda Y., and Amano H., “Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high efficiency α-particle detection”, Electron Devices Technology and Manufacturing (EDTM), Mar 2020, Malaysia.

  4. Sandupatla A., Arulkumaran S., Ng G.I., Ranjan K., Deki M., Nitta S., Honda Y., and Amano H., “Change of conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures” Electron Devices Technology and Manufacturing (EDTM), Mar 2020, Malaysia.

  5. B. Syamal, J. Li, S. B. Chiah, and X. Zhou, “A Compact DC I-V Model for ReRAM,” accepted for presentation at the 27th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2020), Singapore, Jul. 2020.
  1. Yuanbo Li, Rongyue Liu, Jianxun Sun, Jun Zhang and T. P. Chen, “Improvement of transparent IGZO thin-film transistors performance with Ti/ITO bilayer as source and drain”, ICMAT 2019, 23-28 June, 2019, Marina Bay Sands, Singapore

  2. Jianxun Sun, and T. P. Chen, “Determine the optimized set compliance current for the balanced resistive switching in HfO-based Resistive Random Access Memory”, ICMAT 2019, 23-28 June, 2019, Marina Bay Sands, Singapore

  3. G.-E. Chang, M. Kim, G. Sun, and H. H. Cheng, “Design and Analysis of Tensile-Strained GeSn Mid-Infrared Photodetectors on Silicon”, IEEE International Conference on Group IV Photonics (GFP), Singapore, pp. 1-2, August (2019).

  4. M. Kim, “Single Crystalline Inorganic Semiconductor Nanomembranes for Future High Performance Electronic/Optoelectronic Applications”, (Invited Talk) 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 1-3 July, 2019, Busan, Korea.

  5. M. Kim and Z. Ma, “Single crystalline semiconductor nanomembranes for ultra-compact optoelectronic applications”, (Invited Talk) 2019 International Conference on Materials for Advanced Technologies, 23-28 June, 2019, Singapore.

  6. H.-C. Huang, M. Kim, X. Zhan, K. Chabak, J. D. Kim, J.-M. Zuo, and Xi. Li, “On the Surface Properties of High Aspect Ratio β-Ga2O3 Fin Structures Formed by I-MacEtch”, 2019 Compound Semiconductor Week, 19-23 May, 2019, Nara, Japan.

  7. M. Kim, S. Yi, J. D. Kim, X. Yin, J. Li, J. Bong, D. Liu, S.-C. Liu, A. Kvit, W. Zhou, X. Wang, Z. Yu, Z. Ma, and X. Li, “Germanium photodiodes on pyramidal textured surface by Metal-Assisted Chemical Etching”, 2019 Conference on Lasers and Electro-Optics (CLEO), 5-10 May, 2019, San Jose, CA, USA.

  8. Zhihong Liu, Weichuan Xing, Hanlin Xie, Kumud Ranjan, Kenneth E. Lee, and Geok Ing Ng, “Deeply-scalded GaN-on-Si HEMTs with fT up to 300 GHz”, 13th International Conference on Nitride Semiconductors, 13th International Conference on Nitride Semiconductors, Washington, USA, 7-12 July 2019, Washington, USA.

  9. S. Abhinay, S. Arulkumaran, G.I. Ng, K. Ranjan, M. Deki, S. Nitta, Y. Honda and H. Amano, “Enhanced breakdown voltage in vertical Schottky diodes on compensated GaN drift layer grown on free-standing GaN”, 13th International Conference on Nitride Semiconductors, 7-12 July 2019, Bellevue, USA.

  10. Ranjan K., S. Arulkumaran, G. I. Ng, “Low static and dynamic ON-resistance with high Figure-of-Figure-of-Merit in AlGaN/GaN HEMTs on CVD Diamond”, 13th International Conference on Nitride Semiconductors, 7-12 July 2019, Bellevue, USA.

  11. Zhihong LIU, Hanlin XIE, Kwang Hong LEE, Chuan Seng TAN, Geok Ing NG, and Eugen A FITZGERALD, “GaN HEMTs with Breakdown Voltage of 2200 V Realized on a 200 mm GaN-on-Insulator(GNOI)-on-Si Wafer,” VLSI Technology, Jun. 2019, Tokyo, Japan.

  12. Sampath V. G., Ranjan K., Ng G.I. and Arulkumaran S., “Artificial Neural Networks based Modeling of AlGaN/GaN HEMTs on Silicon Substrate”, International Conference on Materials for Advanced Technologies (MRS), June 2019, Singapore.

  13. Ranjan K., Ng G.I., Arulkumaran S., Vicknesh S., and Foo S. C., “Enhanced DC and RF performance of AlGaN/GaN HEMTs on CVD-Diamond in high power CW operation”. Electron Devices Technology and Manufacturing (EDTM), Mar 2019, Singapore

  14. Sandupatla A., Arulkumaran S., Ng G.I., Ranjan K., Deki M., Nitta S., Honda Y. and Amano H., “Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD”. Electron Devices Technology and Manufacturing (EDTM), Mar 2019, Singapore

  15. Whiteside M., Ng G. I., Arulkumaran S., Ranjan K. and Dikme Y., “Low Temperature Epitaxy grown AlN Metal-Insulator-Semiconductor Diodes on AlGaN/GaN HEMT structure”. Electron Devices Technology and Manufacturing (EDTM), Mar 2019, Singapore

  16. G. Yang, R.W.L. Ang, D.P. Poenar, Q. Ramadan and W.K. Wan, "Tissue-on-a-Chip for Extended Viability and Trans-Epithelial Electrical Resistance (TEER) Assessment of Gastrointestinal Tissue Biopsies", presented at the 10th International Conference on Materials for Advanced Technologies (ICMAT 2019), 23-28 June 2019, Marina Bay Sands, Singapore - Paper ID 191357, Symposium J (Micro/nano-technology for Drug Delivery and Imaging).

  17. Javier Mateos, Tomás González, Ignacio Íñiguez-de-la-Torre, Sergio García, Susana Pérez, Christophe Gaquiere, Guillaume Ducournau, Marie Lesecq, Manvi Agrawal, Dharmarasu Nethaji, K Radhakrishnan, (2019, Dec), Design and Fabrication of Planar Gunn Nanodiodes Based on Doped GaN, Proc. 2019 IEEE Asia-Pacific Microwave Conference (APMC), Singapore 12/10/19 to 12/13/19, 971-973.

  18. Manvi Agrawal, Dharmarasu Nethaji, K Radhakrishnan, Christophe Gaquiere, Guillaume Ducournau, Marie Lesecq, Javier Mateos, Tomás González, Ignacio Íñiguez-De-La-Torre, Sergio García, Susana Pérez, (2019, Dec), GaN-based SSD structure for THz applications, Proc. 2019 IEEE Asia-Pacific Microwave Conference (APMC), Singapore, 12/10/19 to 12/13/19, 213-215.

  19. Shashank Patwal, Manvi Agrawal, Nethaji Dharmarasu, K. Radhakrishnan. (2019, July). Carrier mobility enhancement in AlN/GaN/AlN Quantum well for DH-HEMT on SiC by epilayer stress manipulation. Paper presented at 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Washington, USA.

  20. Nethaji Dharmarasu, Giri. S. Karthikeyan, Manvi Agrawal, Seah Tian Long Alex, K. Radhakrishnan. (2019). AlGaN/GaN HEMT grown on SiC with carbon doped GaN buffer by MOCVD. The 3rd Electron Devices Technology and Manufacturing (EDTM) Conference 2019.

  21. Shashank Patwal, Manvi Agrawal, Nethaji Dharmarasu, K. Radhakrishnan. (2019, March). Stress optimization of AlN buffer in AlN/GaN/AlN Quantum well for DH-HEMT on SiC by PA-MBE. Paper presented at The 3rd Electron Devices Technology and Manufacturing (EDTM) Conference, Singapore.

  22. X. Zhou, S. B. Chiah, and B. Syamal, “Monolithic Co-integration of III-V Materials into Foundry Si-CMOS in a Single Chip for Novel Integrated Circuits,” (Invited Paper), Proc. of the 13th International Conference on ASIC (ASICON2019), Chongqing, China, Oct. 2019, paper D5-1.

  23. B. Syamal, S. B. Chiah, and X. Zhou, “Reduction of Current Collapse in GaN (MIS)-HEMTs Using Dual Material Gate,” (Invited Paper), Proc. of the 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2019), Hangzhou, China, Jul. 2019, paper 233.

  24. X. Liu, A. Bernardini, U. Schlichtmann, and X. Zhou, “A Compact Model of Negative Bias Temperature Instability Suitable for Gate-Level Circuit Simulation,” Proc. of the 20th International Symposium on Quality Electronic Design (ISQED-2019), Santa Clara, USA, Mar. 2019, pp. 76–80.
  1. M. Kim and Z. Ma, “Single crystalline semiconductor nanomembranes for ultra-compact electronic and optoelectronic applications”, 8th MRS-Singapore Conference on Advanced Materials, November, 2018, Singapore.

  2. H.-C. Huang, M. Kim, K. Chabak, and X. Li, “Metal-assisted chemical etch of β-Ga2O3 and applications”, 3rd US Workshop on Gallium Oxide (GOX 2018), July, 2018, Columbus, Ohio, USA.

  3. M. Kim, H.-C. Huang, K. Chabak, X. Li, “Metal-assisted chemical etch of β-Ga2O3: towards the formation of smooth, vertical, damage-free, and high aspect ratio fin array”, 2018 Compound Semiconductor Week, May 29-June 1, 2018, Boston, MI, USA.

  4. D. Nam, “[INVITED] Strain-Engineered Low-Threshold Group IV Lasers for Photonic-Integrated Circuits”, ECS Meeting (AiMES), USA, Sep. 2018

  5. D. Nam, “[INVITED] Highly strained germanium nanowire lasers under optical pumping”, IEEE-SUM, USA, Jul. 2018

  6. D. Nam, “[INVITED] Low-Threshold Lasing in Strained Germanium under Optical Pumping”, CLEO, USA, May. 2018

  7. Z. Liu, G. I. Ng and E. A. Fitzgerald, “GaN HEMTs with ITO electrodes: towards realization of transparent GaN circuits,” International Workshop on Nitride semiconductors (IWN), Nov. 2018, Kanazawa, Japan.

  8. Z. Liu, W. Xing, G. I. Ng and T. Palacios, “Mm-wave GaN-on-Si HEMTs with high frequency and high linearity,” Digital Signal Processing (DSP), Nov. 2018, Shanghai, China.

  9. Li, X., Wang, H., Qiao, Z.L., Guo, X., Wang, W.J., Ng, G.I., Liu, C.Y., “Characteristic temperature of a 2 μm InGaSb/AlGaAsSb mode-locked quantum well laser”, (2018) Optics InfoBase Conference Papers, Part F87-MICS 2018, 2 p.

  10. Li, X., Wang, H., Qiao, Z.L., Guo, X., Wang, W.J., Ng, G.I., Liu, C.Y., “Temperature- and current-dependent repetition frequency of a 2 μm InGaSb/AlGaAsSb Mode-locked quantum well laser”, (2018) Optics InfoBase Conference Papers, Part F87-MICS 2018, 2 p.

  11. K. Tamura, Y. Tokuda, S. Arulkumaran, S.C. Foo, G.I. Ng, N. Dharmarasu and K. Radhakrishnan, “Hole Traps in AlGaN/GaN HEMTs on Si Studied by Drain Current MCTS”, International Workshop on Nitride Semiconductors (IWN 2018), 11-16 Nov 2018, Kanazawa, Japan.

  12. S. Abhinay, S. Arulkumaran, G. I. Ng, K. Ranjan, M. Deki, S. Nitta, Y. Honda and H. Amano, “Effect of GaN Drift Layer Thicknesses in vertical Schottky Barrier Diodes on Free-standing GaN substrate”, 50th International Conference on Solid State Devices and Materials (SSDM) 2018, 9-13 Sept 2018, The University of Tokyo, Tokyo, Japan.

  13. K. Tamura, Y. Tokuda, S.C. Foo, G.I. Ng, N. Dharmarasu, K. Radhakrishnan and S. Arulkumaran, “Light pulse width dependence of drain current MCTS spectra in AlGaN/GaN HEMT”, The 79th JSAP Autumn Meeting – 2018, 18-21 Sept 2018, Nagoya Congress Centre, Nagoya, Japan.

  14. S. Arulkumaran and Ng G. I. (Invited Talk) “GaN Electronics on Large Diameter Substrate”, 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), 3-8 June 2018, Nara, Japan.

  15. W. Xing, Z. Liu, K. Ranjan, Y. Gao, G. I. Ng, and T. Palacios, “40-nm-gate GaN-on-Si HEMT with fT of 250 GHz,” Compound Semiconductor Week (CSW) 2018, Jun. 2018, Boston, USA.

  16. Huang, C.-C., Liu, Z., Xing, W., Ng, G.I., Fitzgerald, E.A., Chua, S.J, “The sub-micron GaN HEMT device on 200mm Si(111) wafer with low wafer bow”, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 Proceedings, art. No. 8421503, pp. 257-259.

  17. Tamura K., Tokuda Y., Arulkumaran S., Foo S.C., Ng G.I., Dharmarasu N., and Radhakrishnan K. (2018, November). Hole Traps in AlGaN/GaN HEMTs on Si Studied by Drain Current MCTS. Paper presented at Int. Workshop on Nitride Semiconductors 2018 (IWN 2018), Kanazawa, Japan.

  18. Akhil Ranjan, Manvi Agrawal, K. Radhakrishnan, and Nethaji Dharmarasu. (2018, November). AlGaN/GaN HEMT based high sensitive NO2 gas sensors. Paper presented at The International Workshop on Nitride Semiconductors 2018 (IWN 2018), Kanazawa, Japan.

  19. M. Agrawal, Y. Zheng, S. Patwal, N. Dharmarasu, and K. Radhakrishnan. (2018, September). Preventing Ga-Si interdiffusion using silicon nitride as a nucleation layer for the growth of GaN/AlN on Si(111) by plasma assisted molecular beam epitaxy. Paper presented at The 20th International Conference on Molecular Beam Epitaxy (ICMBE 2018), Shanghai, China.

  20. X. Zhou and S. B. Chiah, “Monolithic III-V/CMOS Co-integrated Technology, Scalable Compact Modeling, and Hybrid Circuit Design,” (Invited Paper), Proc. of the 14th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2018), Qingdao, China, Nov. 2018, paper S35-2.

  21. X. Zhou and S. B. Chiah, “Monolithic III-V/CMOS Technology, Unified Device Compact Models, and Hybrid Process Design Kit,” (Invited Paper), Proc. of the 1st International Conference on Microelectronic Devices and Technologies (MicDAT’2018), Barcelona, Spain, Jun. 2018, pp. 75–77.

  22. S. B. Chiah, X. Zhou, K. E. K. Lee, C. Y. Ng, D. Antoniadis, and E. A. Fitzgerald, “Hybrid Process Design Kit: Single-Chip Monolithic III-V/Si Cascode GaN-HEMT,” (Invited Paper), TechConnect Briefs (WCM-Nanotech2018), Anaheim, CA, May 2018, vol. 4, pp. 257–260.

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