Bottom Interface Engineering for High Performance Perovskite Optoelectronic Devices by Prof Chen Shi (University of Macau)

About the talk

Halide perovskite optoelectronic devices have attracted great research interests in recent years.  Among various improvement strategies, interfacial engineering appears as the one which still has many potentials in device performance optimisation. The upper interface has been extensively engineered to passivate interfacial defects, provoke charge transfer, and enhance moisture resistance. However, the bottom interface is less studied due to the multiple requirements in perovskite film formation, interfacial energy level alignment and dual functional passivation. In our recent studies, we attempted to use three methods: dual ion passivation, graphene coverage, and substrate modification to successfully achieve effective bottom interfacial engineering, and improved device performance in photovoltaics, LEDs, and photodectors.

Our Distinguished Speaker

Prof Chen Shi’s research interests focus on materials interfaces, including perovskite and 2D materials. He is also interested in the in-situ and operando investigation of materials interfaces for battery applications. He obtained his PhD from the Surface Science Lab at the National University of Singapore. He worked as a research fellow at Nanyang Technological University before joining the characterisation group at IMRE A*STAR as a scientist. He is currently a faculty member at the Institute of Applied Physics and Materials Engineering at the University of Macau.

Co-Organisers

IAS@NTU and the Graduate Students' Clubs of EEE, MSE and SPMS.