Innovative Method for High Thermal Robust Resistive Switching Memory

Opportunity   

As demand grows for faster, cost-effective non-volatile memory, ReRAM device structures offer a promising alternative due to their simple architecture and CMOS-friendly fabrication process. However, maintaining thermal robust ReRAM performance remains a challenge, particularly in high-temperature fabrication processes.  

This invention addresses the issue by incorporating oxygen scavenging layers, which enhance thermal stability in ReRAM without compromising resistive switching memory performance. This enables high-speed, low-power memory solutions for smartphones, tablets, automotive systems and IoT devices while maintaining compatibility with existing CMOS fabrication processes. 

Technology  

This thermal robust ReRAM method optimises ReRAM device structures for stable resistive technology by integrating two or more oxygen scavenging layers into the memory cell. The design consists of a first electrode, a buffer layer and second electrode for improved conductivity. It also consists of a primary memory layer with multiple active memory and scavenging layers to enhance thermal stability in ReRAM. 

The approach maintains fast switching speeds, low set/reset voltages and ensures reliable high-performance non-volatile memory across a range of operating conditions. 

Figure 1: 1T1R ReRAM operation 

Applications & Advantages

Applications: 

• Consumer electronics – Smartphones, tablets and IoT devices.
• Automotive systems – High-reliability resistive switching memory for smart vehicles.
• Advanced computing – High-performance non-volatile memory for embedded applications. 

Advantages: 

• CMOS-compatible fabrication for cost-effective production.
• Much faster switching speeds than traditional flash memory.
• Stable resistive switching technology with low power consumption.
• Enhanced thermal robustness, ensuring durability under high-temperature conditions.